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| LL4151 Small Signal Diodes MiniMELF FEATURES Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF .063 (1.6) .055 (1.4) Cathode Mark case especially suited for automatic insertion. including the DO-35 case with the type designation 1N4151 and the SOD-123 case with the type designation 1N4151W. This diode is also available in other case styles .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) Dimensions in inches and (millimeters) MECHANICAL DATA Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Forward DC current at Tamb = 25 C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 50 75 2001) 1501) Unit V V mA mA VR VRM IF I0 IFSM Ptot Tj TS 500 5001) 175 -65 to +175 mA mW C C Valid provided that electrodes are kept at ambient temperature. 4/98 LL4151 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 150 C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. - Typ. - Max. 1 Unit V VF IR IR Ctot - - - - - - 50 50 2 nA A pF trr trr RthJA v - - - 0.45 - - - - 4 2 0.351) - ns ns K/mW - Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4151 RATINGS AND CHARACTERISTIC CURVES LL4151 |
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